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RENESAS RBN50H65T1FPQ-A0#CB0
| Manufacturer | |
| Mfr. Part # | RBN50H65T1FPQ-A0#CB0 |
| EBEE Part # | E83193701 |
| Package | TO-247A |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 250W 100A 650V TO-247A IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.1888 | $ 10.1888 |
| 200+ | $3.9428 | $ 788.5600 |
| 500+ | $3.8044 | $ 1902.2000 |
| 1000+ | $3.7369 | $ 3736.9000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| RoHS | ||
| Operating Temperature | - | |
| Type | - | |
| Collector Current (Ic) | 100A | |
| Power Dissipation (Pd) | 250W | |
| Turn?off Delay Time (Td(off)) | 93ns | |
| Turn?on Delay Time (Td(on)) | 20ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2V@15V,50A | |
| Total Gate Charge (Qg@Ic,Vge) | 36nC | |
| Diode Reverse Recovery Time (Trr) | 65ns | |
| Turn?off Switching Loss (Eoff) | 0.67mJ | |
| Turn?on Switching Loss (Eon) | 0.83mJ |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $10.1888 | $ 10.1888 |
| 200+ | $3.9428 | $ 788.5600 |
| 500+ | $3.8044 | $ 1902.2000 |
| 1000+ | $3.7369 | $ 3736.9000 |
