| Manufacturer | |
| Mfr. Part # | ISL9V3040D3ST |
| EBEE Part # | E8462128 |
| Package | DPAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 150W 21A 430V TO-252-2 IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3470 | $ 1.3470 |
| 10+ | $1.1235 | $ 11.2350 |
| 30+ | $1.0007 | $ 30.0210 |
| 100+ | $0.8618 | $ 86.1800 |
| 500+ | $0.7996 | $ 399.8000 |
| 1000+ | $0.7725 | $ 772.5000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | onsemi ISL9V3040D3ST | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 430V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.6V@4V,6A | |
| Pd - Power Dissipation | 150W | |
| IGBT Type | - | |
| Gate Charge(Qg) | 17nC | |
| Td(off) | 4.8us | |
| Td(on) | 700ns | |
| Turn-On Energy (Eon) | - | |
| Input Capacitance(Cies) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $1.3470 | $ 1.3470 |
| 10+ | $1.1235 | $ 11.2350 |
| 30+ | $1.0007 | $ 30.0210 |
| 100+ | $0.8618 | $ 86.1800 |
| 500+ | $0.7996 | $ 399.8000 |
| 1000+ | $0.7725 | $ 772.5000 |
