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onsemi HGTG5N120BND
| Manufacturer | |
| Mfr. Part # | HGTG5N120BND |
| EBEE Part # | E8442448 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 167W 21A 1.2kV NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.4045 | $ 2.4045 |
| 10+ | $2.0613 | $ 20.6130 |
| 30+ | $1.5649 | $ 46.9470 |
| 90+ | $1.3453 | $ 121.0770 |
| 510+ | $1.2464 | $ 635.6640 |
| 1200+ | $1.2031 | $ 1443.7200 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | onsemi HGTG5N120BND | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@45uA | |
| Pd - Power Dissipation | 167W | |
| IGBT Type | NPT (Non-Punch Through) | |
| Gate Charge(Qg) | 53nC | |
| Td(off) | 160ns | |
| Td(on) | 22ns | |
| Reverse Recovery Time(trr) | 65ns | |
| Switching Energy(Eoff) | 390uJ | |
| Turn-On Energy (Eon) | 450uJ | |
| Input Capacitance(Cies) | - |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.4045 | $ 2.4045 |
| 10+ | $2.0613 | $ 20.6130 |
| 30+ | $1.5649 | $ 46.9470 |
| 90+ | $1.3453 | $ 121.0770 |
| 510+ | $1.2464 | $ 635.6640 |
| 1200+ | $1.2031 | $ 1443.7200 |
