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onsemi FGY75T120SWD


Manufacturer
Mfr. Part #
FGY75T120SWD
EBEE Part #
E820047184
Package
TO-247-3
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
TO-247-3 IGBT Transistors / Modules ROHS
This materials supports customized cables!
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4 In Stock for Fast Shipping
4 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$6.0845$ 6.0845
10+$5.2333$ 52.3330
30+$4.7132$ 141.3960
90+$4.2781$ 385.0290
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TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
Datasheetonsemi FGY75T120SWD
RoHS
Operating Temperature-55℃~+175℃
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)5.6V@75mA
Pd - Power Dissipation714W
IGBT TypeFS (Field Stop)
Gate Charge(Qg)214nC@15V
Td(off)171ns
Td(on)42ns
Reverse Transfer Capacitance (Cres)29.6pF
Reverse Recovery Time(trr)204ns
Switching Energy(Eoff)2.32mJ
Turn-On Energy (Eon)5mJ
Input Capacitance(Cies)6.331nF
Pulsed Current- Forward(Ifm)300A
Output Capacitance(Coes)234pF

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