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onsemi FGH50T65SQD-F155


Manufacturer
Mfr. Part #
FGH50T65SQD-F155
EBEE Part #
E8132704
Package
TO-247-G03
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
268W 100A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS
This materials supports customized cables!
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6 In Stock for Fast Shipping
6 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$3.4356$ 3.4356
10+$3.0371$ 30.3710
30+$2.6546$ 79.6380
100+$2.3991$ 239.9100
500+$2.2834$ 1141.7000
1000+$2.2336$ 2233.6000
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TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
Datasheetonsemi FGH50T65SQD-F155
RoHS
Operating Temperature-55℃~+175℃@(Tj)
Collector-Emitter Breakdown Voltage (Vces)650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2.6V@50mA
Pd - Power Dissipation268W
IGBT TypeFS (Field Stop)
Gate Charge(Qg)99nC@15V
Td(off)105ns
Td(on)22ns
Reverse Transfer Capacitance (Cres)12pF
Reverse Recovery Time(trr)31ns
Switching Energy(Eoff)45uJ
Turn-On Energy (Eon)180uJ
Input Capacitance(Cies)3.275nF
Pulsed Current- Forward(Ifm)200A
Output Capacitance(Coes)84pF

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