| Manufacturer | |
| Mfr. Part # | FGH50T65SQD-F155 |
| EBEE Part # | E8132704 |
| Package | TO-247-G03 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 268W 100A 650V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4356 | $ 3.4356 |
| 10+ | $3.0371 | $ 30.3710 |
| 30+ | $2.6546 | $ 79.6380 |
| 100+ | $2.3991 | $ 239.9100 |
| 500+ | $2.2834 | $ 1141.7000 |
| 1000+ | $2.2336 | $ 2233.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | onsemi FGH50T65SQD-F155 | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.6V@50mA | |
| Pd - Power Dissipation | 268W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 99nC@15V | |
| Td(off) | 105ns | |
| Td(on) | 22ns | |
| Reverse Transfer Capacitance (Cres) | 12pF | |
| Reverse Recovery Time(trr) | 31ns | |
| Switching Energy(Eoff) | 45uJ | |
| Turn-On Energy (Eon) | 180uJ | |
| Input Capacitance(Cies) | 3.275nF | |
| Pulsed Current- Forward(Ifm) | 200A | |
| Output Capacitance(Coes) | 84pF |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.4356 | $ 3.4356 |
| 10+ | $3.0371 | $ 30.3710 |
| 30+ | $2.6546 | $ 79.6380 |
| 100+ | $2.3991 | $ 239.9100 |
| 500+ | $2.2834 | $ 1141.7000 |
| 1000+ | $2.2336 | $ 2233.6000 |
