| Manufacturer | |
| Mfr. Part # | APT75GN60BDQ2G |
| EBEE Part # | E83193690 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 536W 155A 600V FS(Field Stop) TO-247-3 IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $26.5258 | $ 26.5258 |
| 200+ | $10.2650 | $ 2053.0000 |
| 500+ | $9.9048 | $ 4952.4000 |
| 1000+ | $9.7274 | $ 9727.4000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | Microchip Tech APT75GN60BDQ2G | |
| RoHS | ||
| Operating Temperature | -55℃~+175℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 155A | |
| Power Dissipation (Pd) | 536W | |
| Turn?off Delay Time (Td(off)) | 385ns | |
| Turn?on Delay Time (Td(on)) | 47ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 1.85V@15V,75A | |
| Total Gate Charge (Qg@Ic,Vge) | 485nC | |
| Diode Reverse Recovery Time (Trr) | 25ns | |
| Turn?off Switching Loss (Eoff) | 2.14mJ | |
| Turn?on Switching Loss (Eon) | 2.5mJ |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $26.5258 | $ 26.5258 |
| 200+ | $10.2650 | $ 2053.0000 |
| 500+ | $9.9048 | $ 4952.4000 |
| 1000+ | $9.7274 | $ 9727.4000 |
