| Manufacturer | |
| Mfr. Part # | APT50GS60BRDQ2G |
| EBEE Part # | E83193674 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 415W 93A 600V NPT (non-penetrating type) TO-247-3 IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $19.9551 | $ 19.9551 |
| 10+ | $19.1603 | $ 191.6030 |
| 30+ | $17.7833 | $ 533.4990 |
| 90+ | $16.5838 | $ 1492.5420 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | Microchip Tech APT50GS60BRDQ2G | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | NPT (non-penetrating type) | |
| Collector Current (Ic) | 93A | |
| Power Dissipation (Pd) | 415W | |
| Turn?off Delay Time (Td(off)) | 225ns | |
| Turn?on Delay Time (Td(on)) | 16ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.15V@15V,50A | |
| Total Gate Charge (Qg@Ic,Vge) | 235nC | |
| Diode Reverse Recovery Time (Trr) | 25ns | |
| Turn?off Switching Loss (Eoff) | 0.755mJ | |
| Turn?on Switching Loss (Eon) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $19.9551 | $ 19.9551 |
| 10+ | $19.1603 | $ 191.6030 |
| 30+ | $17.7833 | $ 533.4990 |
| 90+ | $16.5838 | $ 1492.5420 |
