| Manufacturer | |
| Mfr. Part # | APT100GT120JRDQ4 |
| EBEE Part # | E817198710 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 570W 123A 1.2kV NPT (non-penetrating type) IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $174.5396 | $ 174.5396 |
| 200+ | $69.6441 | $ 13928.8200 |
| 500+ | $67.3158 | $ 33657.9000 |
| 1000+ | $66.1656 | $ 66165.6000 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,IGBTs ,IGBT Modules | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | NPT (non-penetrating type) | |
| Collector Current (Ic) | 123A | |
| Power Dissipation (Pd) | 570W | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Input Capacitance (Cies@Vce) | 7.85nF@25V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.7V@15V,100A |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $174.5396 | $ 174.5396 |
| 200+ | $69.6441 | $ 13928.8200 |
| 500+ | $67.3158 | $ 33657.9000 |
| 1000+ | $66.1656 | $ 66165.6000 |
