| Manufacturer | |
| Mfr. Part # | FP25R12W2T4 |
| EBEE Part # | E8534015 |
| Package | Through Hole,62.8x56.7mm |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $39.0250 | $ 39.0250 |
| 30+ | $37.8852 | $ 1136.5560 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,IGBTs ,IGBT Modules | |
| Datasheet | Infineon FP25R12W2T4 | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] | |
| Current - Collector(Ic) | 39A | |
| Pd - Power Dissipation | 175W | |
| IGBT Type | IGBT Module | |
| Vce Saturation(VCE(sat)) | 2.25V@25A,15V | |
| Td(off) | 190ns | |
| Td(on) | 26ns | |
| Reverse Transfer Capacitance (Cres) | 0.05nF | |
| Switching Energy(Eoff) | 1.45mJ | |
| Turn-On Energy (Eon) | 1.6mJ | |
| Input Capacitance(Cies) | 1.45nF | |
| Pulsed Current- Forward(Ifm) | 50A |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $39.0250 | $ 39.0250 |
| 30+ | $37.8852 | $ 1136.5560 |
