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Infineon Technologies FP25R12W2T4


Manufacturer
Mfr. Part #
FP25R12W2T4
EBEE Part #
E8534015
Package
Through Hole,62.8x56.7mm
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
IGBT Transistors / Modules ROHS
This materials supports customized cables!
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35 In Stock for Fast Shipping
35 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$39.0250$ 39.0250
30+$37.8852$ 1136.5560
Best price for more quantity?
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TypeDescription
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CategoryDiscrete Semiconductors ,IGBTs ,IGBT Modules
DatasheetInfineon FP25R12W2T4
RoHS
Operating Temperature-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)[email protected]
Current - Collector(Ic)39A
Pd - Power Dissipation175W
IGBT TypeIGBT Module
Vce Saturation(VCE(sat))2.25V@25A,15V
Td(off)190ns
Td(on)26ns
Reverse Transfer Capacitance (Cres)0.05nF
Switching Energy(Eoff)1.45mJ
Turn-On Energy (Eon)1.6mJ
Input Capacitance(Cies)1.45nF
Pulsed Current- Forward(Ifm)50A

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