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Infineon Technologies F3L25R12W1T4B27
| Manufacturer | |
| Mfr. Part # | F3L25R12W1T4B27 |
| EBEE Part # | E83190223 |
| Package | - |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 215W 45A 1.2kV IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>1 In Stock for Fast Shipping
1 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $39.3856 | $ 39.3856 |
| 10+ | $38.0326 | $ 380.3260 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,IGBTs ,IGBT Modules | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.25V@15V,25A | |
| Current - Collector(Ic) | 45A | |
| Pd - Power Dissipation | 215W | |
| IGBT Type | - | |
| Input Capacitance(Cies) | 1.45nF@25V |
Shopping Guide
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1 Stock for Shipping Fast
1 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $39.3856 | $ 39.3856 |
| 10+ | $38.0326 | $ 380.3260 |
Best price for more quantity?
$
