| Manufacturer | |
| Mfr. Part # | FP40R12KT3 |
| EBEE Part # | E8534037 |
| Package | Through Hole,107.5x45mm |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $43.9377 | $ 43.9377 |
| 30+ | $42.3620 | $ 1270.8600 |
| Type | Description | Select All |
|---|---|---|
| Category | Discrete Semiconductors ,IGBTs ,IGBT Modules | |
| Datasheet | Infineon FP40R12KT3 | |
| RoHS | ||
| Operating Temperature | -40℃~+125℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] | |
| Current - Collector(Ic) | 40A | |
| Pd - Power Dissipation | 210W | |
| IGBT Type | IGBT Module | |
| Gate Charge(Qg) | - | |
| Vce Saturation(VCE(sat)) | 1.8V@40A,15V | |
| Td(off) | 420ns | |
| Td(on) | 90ns | |
| Reverse Transfer Capacitance (Cres) | 0.09nF | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 3.6mJ | |
| Turn-On Energy (Eon) | 4.1mJ | |
| Input Capacitance(Cies) | - | |
| Pulsed Current- Forward(Ifm) | 80A |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $43.9377 | $ 43.9377 |
| 30+ | $42.3620 | $ 1270.8600 |
