5% off
| Manufacturer | |
| Mfr. Part # | YGW50N65T1 |
| EBEE Part # | E84153738 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 50A 650V TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.4248 | $ 2.4248 |
| 10+ | $2.0677 | $ 20.6770 |
| 30+ | $1.7794 | $ 53.3820 |
| 90+ | $1.5489 | $ 139.4010 |
| 510+ | $1.4451 | $ 737.0010 |
| 1200+ | $1.3994 | $ 1679.2800 |
| 1800+ | $1.3825 | $ 2488.5000 |
| 4200+ | $1.3704 | $ 5755.6800 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | luxin-semi YGW50N65T1 | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4V@250uA | |
| Pd - Power Dissipation | 312W | |
| Td(off) | 180ns | |
| Td(on) | 40ns | |
| Reverse Transfer Capacitance (Cres) | 75pF | |
| Reverse Recovery Time(trr) | 20ns | |
| Switching Energy(Eoff) | 1.1mJ | |
| Turn-On Energy (Eon) | 1.9mJ | |
| Input Capacitance(Cies) | 2.8nF | |
| Output Capacitance(Coes) | 130pF |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.4248 | $ 2.4248 |
| 10+ | $2.0677 | $ 20.6770 |
| 30+ | $1.7794 | $ 53.3820 |
| 90+ | $1.5489 | $ 139.4010 |
| 510+ | $1.4451 | $ 737.0010 |
| 1200+ | $1.3994 | $ 1679.2800 |
| 1800+ | $1.3825 | $ 2488.5000 |
| 4200+ | $1.3704 | $ 5755.6800 |
