| Manufacturer | |
| Mfr. Part # | IKW50N65H5 |
| EBEE Part # | E8476108 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7880 | $ 2.7880 |
| 10+ | $2.4200 | $ 24.2000 |
| 30+ | $2.0392 | $ 61.1760 |
| 90+ | $1.8030 | $ 162.2700 |
| 510+ | $1.6953 | $ 864.6030 |
| 990+ | $1.6503 | $ 1633.7970 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | Infineon Technologies IKW50N65H5 | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] | |
| Pd - Power Dissipation | 305W | |
| Gate Charge(Qg) | 120nC@15V | |
| Td(off) | 180ns | |
| Td(on) | 21ns | |
| Reverse Transfer Capacitance (Cres) | 11pF | |
| Reverse Recovery Time(trr) | 57ns | |
| Switching Energy(Eoff) | 180uJ | |
| Turn-On Energy (Eon) | 520uJ | |
| Input Capacitance(Cies) | 3nF | |
| Pulsed Current- Forward(Ifm) | 150A | |
| Output Capacitance(Coes) | 65pF |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.7880 | $ 2.7880 |
| 10+ | $2.4200 | $ 24.2000 |
| 30+ | $2.0392 | $ 61.1760 |
| 90+ | $1.8030 | $ 162.2700 |
| 510+ | $1.6953 | $ 864.6030 |
| 990+ | $1.6503 | $ 1633.7970 |
