| Manufacturer | |
| Mfr. Part # | IKW50N60T |
| EBEE Part # | E810458 |
| Package | TO-247 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2700 | $ 3.2700 |
| 10+ | $2.8072 | $ 28.0720 |
| 30+ | $2.1194 | $ 63.5820 |
| 90+ | $1.8225 | $ 164.0250 |
| 480+ | $1.6885 | $ 810.4800 |
| 960+ | $1.6310 | $ 1565.7600 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | Infineon Technologies IKW50N60T | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] | |
| Pd - Power Dissipation | 333W | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 310nC@15V | |
| Td(off) | 299ns | |
| Td(on) | 26ns | |
| Reverse Recovery Time(trr) | 143ns | |
| Switching Energy(Eoff) | 1.4mJ | |
| Turn-On Energy (Eon) | 1.2mJ | |
| Input Capacitance(Cies) | 3.14nF | |
| Pulsed Current- Forward(Ifm) | 150A |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.2700 | $ 3.2700 |
| 10+ | $2.8072 | $ 28.0720 |
| 30+ | $2.1194 | $ 63.5820 |
| 90+ | $1.8225 | $ 164.0250 |
| 480+ | $1.6885 | $ 810.4800 |
| 960+ | $1.6310 | $ 1565.7600 |
