| Manufacturer | |
| Mfr. Part # | IKW40N120T2 |
| EBEE Part # | E8111028 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | TO-247-3 IGBT Transistors / Modules ROHS |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1344 | $ 4.1344 |
| 10+ | $3.6200 | $ 36.2000 |
| 30+ | $3.0611 | $ 91.8330 |
| 90+ | $2.7531 | $ 247.7790 |
| 480+ | $2.6102 | $ 1252.8960 |
| 960+ | $2.5451 | $ 2443.2960 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | Infineon Technologies IKW40N120T2 | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | [email protected] | |
| Pd - Power Dissipation | 480W | |
| Gate Charge(Qg) | 192nC@15V | |
| Td(off) | 314ns | |
| Td(on) | 33ns | |
| Reverse Transfer Capacitance (Cres) | 125pF | |
| Reverse Recovery Time(trr) | 285ns | |
| Switching Energy(Eoff) | 2.05mJ | |
| Turn-On Energy (Eon) | 3.2mJ | |
| Input Capacitance(Cies) | 2.36nF | |
| Pulsed Current- Forward(Ifm) | 160A | |
| Output Capacitance(Coes) | 230pF |
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $4.1344 | $ 4.1344 |
| 10+ | $3.6200 | $ 36.2000 |
| 30+ | $3.0611 | $ 91.8330 |
| 90+ | $2.7531 | $ 247.7790 |
| 480+ | $2.6102 | $ 1252.8960 |
| 960+ | $2.5451 | $ 2443.2960 |
