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Infineon Technologies FP10R12W1T4


Manufacturer
Mfr. Part #
FP10R12W1T4
EBEE Part #
E8541162
Package
Through Hole,62.8x33.8mm
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
IGBT Transistors / Modules ROHS
This materials supports customized cables!
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16 In Stock for Fast Shipping
16 available for immediate shipping
Can Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$20.1592$ 20.1592
24+$19.4817$ 467.5608
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TypeDescription
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CategoryDiscrete Semiconductors ,IGBTs ,IGBT Modules
DatasheetInfineon FP10R12W1T4
RoHS
Operating Temperature-40℃~+150℃
Collector-Emitter Breakdown Voltage (Vces)1.2kV
Gate-Emitter Threshold Voltage (Vge(th)@Ic)[email protected]
Current - Collector(Ic)20A
Pd - Power Dissipation105W
Vce Saturation(VCE(sat))2.25V@10A,15V
Td(off)180ns
Td(on)45ns
Reverse Transfer Capacitance (Cres)0.024nF
Switching Energy(Eoff)550uJ
Turn-On Energy (Eon)900uJ
Input Capacitance(Cies)600pF
Pulsed Current- Forward(Ifm)300A

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