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HARRIS HGTH12N50C1D
| Manufacturer | |
| Mfr. Part # | HGTH12N50C1D |
| EBEE Part # | E817621790 |
| Package | TO-218 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 75W 12A 500V TO-218 IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.5755 | $ 7.5755 |
| 242+ | $3.0239 | $ 731.7838 |
| 484+ | $2.9230 | $ 1414.7320 |
| 968+ | $2.8724 | $ 2780.4832 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | HARRIS HGTH12N50C1D | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | - | |
| Collector Current (Ic) | 12A | |
| Power Dissipation (Pd) | 75W | |
| Turn?off Delay Time (Td(off)) | - | |
| Turn?on Delay Time (Td(on)) | - | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.2V@20V,17.5A | |
| Total Gate Charge (Qg@Ic,Vge) | 19nC | |
| Diode Reverse Recovery Time (Trr) | 100ns | |
| Turn?off Switching Loss (Eoff) | - | |
| Turn?on Switching Loss (Eon) | - |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $7.5755 | $ 7.5755 |
| 242+ | $3.0239 | $ 731.7838 |
| 484+ | $2.9230 | $ 1414.7320 |
| 968+ | $2.8724 | $ 2780.4832 |
