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HARRIS HGTD8P50G1


Manufacturer
Mfr. Part #
HGTD8P50G1
EBEE Part #
E83191173
Package
IPAK
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
66W 12A 500V IPAK IGBT Transistors / Modules ROHS
This materials supports customized cables!
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Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$0.0626$ 0.0626
200+$0.0243$ 4.8600
500+$0.0233$ 11.6500
1000+$0.0230$ 23.0000
TypeDescription
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CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetHARRIS HGTD8P50G1
RoHS
Operating Temperature-40℃~+150℃@(Tj)
Type-
Collector Current (Ic)12A
Power Dissipation (Pd)66W
Collector-Emitter Breakdown Voltage (Vces)500V
Input Capacitance (Cies@Vce)-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)3.7V@15V,8A
Total Gate Charge (Qg@Ic,Vge)30nC
Turn?on Switching Loss (Eon)-

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