| Manufacturer | |
| Mfr. Part # | HGTD8P50G1 |
| EBEE Part # | E83191173 |
| Package | IPAK |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 66W 12A 500V IPAK IGBT Transistors / Modules ROHS |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.0626 | $ 0.0626 |
| 200+ | $0.0243 | $ 4.8600 |
| 500+ | $0.0233 | $ 11.6500 |
| 1000+ | $0.0230 | $ 23.0000 |
| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | HARRIS HGTD8P50G1 | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Type | - | |
| Collector Current (Ic) | 12A | |
| Power Dissipation (Pd) | 66W | |
| Collector-Emitter Breakdown Voltage (Vces) | 500V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 3.7V@15V,8A | |
| Total Gate Charge (Qg@Ic,Vge) | 30nC | |
| Turn?on Switching Loss (Eon) | - |
Please send RFQ , we will respond immediately.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $0.0626 | $ 0.0626 |
| 200+ | $0.0243 | $ 4.8600 |
| 500+ | $0.0233 | $ 11.6500 |
| 1000+ | $0.0230 | $ 23.0000 |
