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HARRIS HGT1S7N60B3D
| Manufacturer | |
| Mfr. Part # | HGT1S7N60B3D |
| EBEE Part # | E83191162 |
| Package | I2PAK(TO-262) |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 60W 14A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5560 | $ 3.5560 |
| 200+ | $1.3770 | $ 275.4000 |
| 500+ | $1.3291 | $ 664.5500 |
| 1000+ | $1.3042 | $ 1304.2000 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | HARRIS HGT1S7N60B3D | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | - | |
| Collector Current (Ic) | 14A | |
| Power Dissipation (Pd) | 60W | |
| Turn?off Delay Time (Td(off)) | 130ns | |
| Turn?on Delay Time (Td(on)) | 26ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 600V | |
| Input Capacitance (Cies@Vce) | - | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.1V@15V,7A | |
| Total Gate Charge (Qg@Ic,Vge) | 30nC | |
| Diode Reverse Recovery Time (Trr) | 21ns | |
| Turn?off Switching Loss (Eoff) | 0.12mJ | |
| Turn?on Switching Loss (Eon) | 0.16mJ |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $3.5560 | $ 3.5560 |
| 200+ | $1.3770 | $ 275.4000 |
| 500+ | $1.3291 | $ 664.5500 |
| 1000+ | $1.3042 | $ 1304.2000 |
