Recommonended For You
Images are for reference only
Add to Favourites

HARRIS HGT1S12N60C3


Manufacturer
Mfr. Part #
HGT1S12N60C3
EBEE Part #
E83191155
Package
I2PAK(TO-262)
Customer #
Datasheet
EDA Models
ECCN
EAR99
Description
104W 24A 600V I2PAK(TO-262) IGBT Transistors / Modules ROHS
This materials supports customized cables!
Learn more >>

In Stock : Please Inquire

Please send RFQ , we will respond immediately.

Contact Name
Business Email
Company Name
Country
Quality
Sales Unit: PieceFull Bag: 200
Qty.Unit PriceExt. Price
1+$4.6792$ 4.6792
200+$1.8117$ 362.3400
500+$1.7479$ 873.9500
1000+$1.7159$ 1715.9000
TypeDescription
Select All
CategoryTransistors/Thyristors ,IGBT Transistors / Modules
DatasheetHARRIS HGT1S12N60C3
RoHS
Operating Temperature-40℃~+150℃@(Tj)
Type-
Collector Current (Ic)24A
Power Dissipation (Pd)104W
Collector-Emitter Breakdown Voltage (Vces)600V
Input Capacitance (Cies@Vce)-
Gate-Emitter Threshold Voltage (Vge(th)@Ic)2V@15V,12A
Total Gate Charge (Qg@Ic,Vge)62nC
Turn?on Switching Loss (Eon)-

Shopping Guide

Expand