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Hangzhou Silan Microelectronics SGM40HF12A1TFD
| Manufacturer | |
| Mfr. Part # | SGM40HF12A1TFD |
| EBEE Part # | E82761782 |
| Package | - |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 40A 1.2kV IGBT module IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.8791 | $ 11.8791 |
| 10+ | $10.7892 | $ 107.8920 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | Hangzhou Silan Microelectronics SGM40HF12A1TFD | |
| RoHS | ||
| Operating Temperature | -40℃~+150℃@(Tj) | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.2kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 5.5V@250uA | |
| Pd - Power Dissipation | - | |
| IGBT Type | IGBT Module | |
| Gate Charge(Qg) | 413nC@40A,±15V | |
| Td(off) | 611ns | |
| Td(on) | 425ns | |
| Reverse Recovery Time(trr) | 117ns | |
| Switching Energy(Eoff) | 2.2mJ | |
| Turn-On Energy (Eon) | 9.3mJ | |
| Input Capacitance(Cies) | 6.58nF@25V |
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $11.8791 | $ 11.8791 |
| 10+ | $10.7892 | $ 107.8920 |
