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FUXINSEMI IHW20N135R5F
| Manufacturer | |
| Mfr. Part # | IHW20N135R5F |
| EBEE Part # | E87467022 |
| Package | TO-247-3 |
| Customer # | |
| Datasheet | |
| EDA Models | |
| ECCN | - |
| Description | 333W 40A 1.35kV TO-247-3 IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>487 In Stock for Fast Shipping
487 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1800 | $ 2.1800 |
| 10+ | $1.8227 | $ 18.2270 |
| 30+ | $1.6274 | $ 48.8220 |
| 90+ | $1.4052 | $ 126.4680 |
| 510+ | $1.3067 | $ 666.4170 |
| 990+ | $1.2623 | $ 1249.6770 |
Best price for more quantity?
$
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Datasheet | FUXINSEMI IHW20N135R5F | |
| RoHS | ||
| Operating Temperature | -40℃~+175℃ | |
| Collector-Emitter Breakdown Voltage (Vces) | 1.35kV | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 4.8V@1mA | |
| Pd - Power Dissipation | 333W | |
| IGBT Type | - | |
| Gate Charge(Qg) | 175nC@15V | |
| Td(off) | 204ns | |
| Td(on) | - | |
| Reverse Transfer Capacitance (Cres) | 57pF | |
| Reverse Recovery Time(trr) | - | |
| Switching Energy(Eoff) | 1.02mJ | |
| Turn-On Energy (Eon) | 1.02mJ | |
| Input Capacitance(Cies) | 1.781nF | |
| Pulsed Current- Forward(Ifm) | 60A | |
| Output Capacitance(Coes) | 95pF |
Shopping Guide
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487 Stock for Shipping Fast
487 available for immediate shippingCan Ship in 1-2 Business Days
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $2.1800 | $ 2.1800 |
| 10+ | $1.8227 | $ 18.2270 |
| 30+ | $1.6274 | $ 48.8220 |
| 90+ | $1.4052 | $ 126.4680 |
| 510+ | $1.3067 | $ 666.4170 |
| 990+ | $1.2623 | $ 1249.6770 |
Best price for more quantity?
$
