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BOURNS BIDW50N65T
| Manufacturer | |
| Mfr. Part # | BIDW50N65T |
| EBEE Part # | E817512645 |
| Package | TO-247 |
| Customer # | |
| EDA Models | |
| ECCN | EAR99 |
| Description | 416W 100A 650V FS(Field Stop) TO-247 IGBT Transistors / Modules ROHS |
This materials supports customized cables!
Learn more >>In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.1275 | $ 5.1275 |
| 210+ | $2.0463 | $ 429.7230 |
| 510+ | $1.9787 | $ 1009.1370 |
| 990+ | $1.9441 | $ 1924.6590 |
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Specifications
2768products found.Show Similar| Type | Description | Select All |
|---|---|---|
| Category | Transistors/Thyristors ,IGBT Transistors / Modules | |
| RoHS | ||
| Operating Temperature | -55℃~+150℃@(Tj) | |
| Type | FS(Field Stop) | |
| Collector Current (Ic) | 100A | |
| Power Dissipation (Pd) | 416W | |
| Turn?off Delay Time (Td(off)) | 125ns | |
| Turn?on Delay Time (Td(on)) | 37ns | |
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 2.2V@15V,50A | |
| Total Gate Charge (Qg@Ic,Vge) | 123nC | |
| Diode Reverse Recovery Time (Trr) | 37.5ns | |
| Turn?off Switching Loss (Eoff) | 1.1mJ | |
| Turn?on Switching Loss (Eon) | 3mJ |
Shopping Guide
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In Stock : Please Inquire
Please send RFQ , we will respond immediately.
Sales Unit: PieceFull Bag: 200
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1+ | $5.1275 | $ 5.1275 |
| 210+ | $2.0463 | $ 429.7230 |
| 510+ | $1.9787 | $ 1009.1370 |
| 990+ | $1.9441 | $ 1924.6590 |
