| Fabricant | |
| Référence Fabricant | CS7N65FA9R |
| Référence EBEE | E8140750 |
| Boîtier | TO-220F |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 650V 7A 35W 1.2Ω@10V,3.5A 2V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.3868 | $ 0.3868 |
| 10+ | $0.3002 | $ 3.0020 |
| 50+ | $0.2646 | $ 13.2300 |
| 100+ | $0.2182 | $ 21.8200 |
| 500+ | $0.1981 | $ 99.0500 |
| 1000+ | $0.1857 | $ 185.7000 |
| 2000+ | $0.1826 | $ 365.2000 |
| 4000+ | $0.1811 | $ 724.4000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Wuxi China Resources Huajing Microelectronics CS7N65FA9R | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 1.4Ω@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 5.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 7A | |
| Ciss-Input Capacitance | 1.13nF | |
| Output Capacitance(Coss) | 93pF | |
| Gate Charge(Qg) | 24nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.3868 | $ 0.3868 |
| 10+ | $0.3002 | $ 3.0020 |
| 50+ | $0.2646 | $ 13.2300 |
| 100+ | $0.2182 | $ 21.8200 |
| 500+ | $0.1981 | $ 99.0500 |
| 1000+ | $0.1857 | $ 185.7000 |
| 2000+ | $0.1826 | $ 365.2000 |
| 4000+ | $0.1811 | $ 724.4000 |
