| Fabricant | |
| Référence Fabricant | CS5N65FA9R |
| Référence EBEE | E8140746 |
| Boîtier | TO-220F |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 650V 5A 30W 2.8Ω@10V,2A 4V@250uA 1 N-channel TO-220F-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.3617 | $ 0.3617 |
| 10+ | $0.2865 | $ 2.8650 |
| 50+ | $0.2543 | $ 12.7150 |
| 100+ | $0.2141 | $ 21.4100 |
| 500+ | $0.1962 | $ 98.1000 |
| 1000+ | $0.1855 | $ 185.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Wuxi China Resources Huajing Microelectronics CS5N65FA9R | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 2.8Ω@10V | |
| Température de fonctionnement | - | |
| Capacité de transfert inversé (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 5A | |
| Ciss-Input Capacitance | - | |
| Output Capacitance(Coss) | - | |
| Gate Charge(Qg) | 14.5nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.3617 | $ 0.3617 |
| 10+ | $0.2865 | $ 2.8650 |
| 50+ | $0.2543 | $ 12.7150 |
| 100+ | $0.2141 | $ 21.4100 |
| 500+ | $0.1962 | $ 98.1000 |
| 1000+ | $0.1855 | $ 185.5000 |
