| Fabricant | |
| Référence Fabricant | 2N65M |
| Référence EBEE | E87433961 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 650V 4A TO-252 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1551 | $ 0.7755 |
| 50+ | $0.1201 | $ 6.0050 |
| 150+ | $0.1051 | $ 15.7650 |
| 500+ | $0.0864 | $ 43.2000 |
| 2500+ | $0.0780 | $ 195.0000 |
| 5000+ | $0.0730 | $ 365.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | WEIDA 2N65M | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 3.8Ω@10V | |
| Capacité de transfert inversé (Crss-Vds) | 6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 290pF | |
| Output Capacitance(Coss) | 31pF | |
| Gate Charge(Qg) | 9nC |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1551 | $ 0.7755 |
| 50+ | $0.1201 | $ 6.0050 |
| 150+ | $0.1051 | $ 15.7650 |
| 500+ | $0.0864 | $ 43.2000 |
| 2500+ | $0.0780 | $ 195.0000 |
| 5000+ | $0.0730 | $ 365.0000 |
