| Fabricant | |
| Référence Fabricant | IRFD120PBF |
| Référence EBEE | E814896 |
| Boîtier | HVMDIP-4 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 100V 1.3A 270mΩ@10V,780mA 1.3W 4V@250uA 1 N-Channel HVMDIP-4 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.4543 | $ 0.4543 |
| 10+ | $0.3783 | $ 3.7830 |
| 30+ | $0.3457 | $ 10.3710 |
| 100+ | $0.3050 | $ 30.5000 |
| 500+ | $0.2869 | $ 143.4500 |
| 1000+ | $0.2761 | $ 276.1000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Vishay Intertech IRFD120PBF | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS (on) | 270mΩ@10V | |
| Température de fonctionnement | -55℃~+175℃ | |
| Capacité de transfert inversé (Crss-Vds) | 34pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.3W | |
| Drain to Source Voltage | 100V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 1.3A | |
| Ciss-Input Capacitance | 360pF | |
| Output Capacitance(Coss) | 150pF | |
| Gate Charge(Qg) | 16nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.4543 | $ 0.4543 |
| 10+ | $0.3783 | $ 3.7830 |
| 30+ | $0.3457 | $ 10.3710 |
| 100+ | $0.3050 | $ 30.5000 |
| 500+ | $0.2869 | $ 143.4500 |
| 1000+ | $0.2761 | $ 276.1000 |
