| Fabricant | |
| Référence Fabricant | 4N65KG-TC-TN3-R |
| Référence EBEE | E85247264 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | TO-252 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1809 | $ 0.9045 |
| 50+ | $0.1592 | $ 7.9600 |
| 150+ | $0.1499 | $ 22.4850 |
| 500+ | $0.1384 | $ 69.2000 |
| 2500+ | $0.1332 | $ 333.0000 |
| 5000+ | $0.1301 | $ 650.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,MOSFETs | |
| Fiche Technique | UTC(Unisonic Tech) 4N65KG-TC-TN3-R | |
| RoHS | ||
| Type | N-Channel | |
| RDS(on) | 2.2Ω@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 3.2pF | |
| Number | 1 N-channel | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 4A | |
| Ciss-Input Capacitance | 600pF | |
| Output Capacitance(Coss) | 53.8pF | |
| Gate Charge(Qg) | 13nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1809 | $ 0.9045 |
| 50+ | $0.1592 | $ 7.9600 |
| 150+ | $0.1499 | $ 22.4850 |
| 500+ | $0.1384 | $ 69.2000 |
| 2500+ | $0.1332 | $ 333.0000 |
| 5000+ | $0.1301 | $ 650.5000 |
