| Fabricant | |
| Référence Fabricant | CSD17552Q3A |
| Référence EBEE | E82859657 |
| Boîtier | VSONP-8(3.3x3.3) |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 30V 2.6W 6mΩ@10V,11A 1.9V@250uA 1 N-channel VSONP-8(3.3x3.3) MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.6175 | $ 0.6175 |
| 10+ | $0.5505 | $ 5.5050 |
| 30+ | $0.5170 | $ 15.5100 |
| 100+ | $0.4851 | $ 48.5100 |
| 500+ | $0.4643 | $ 232.1500 |
| 1000+ | $0.4547 | $ 454.7000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Texas Instruments CSD17552Q3A | |
| RoHS | ||
| RDS (on) | 6mΩ@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 2.6W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.9V | |
| Current - Continuous Drain(Id) | 15A;60A | |
| Ciss-Input Capacitance | 2.05nF | |
| Gate Charge(Qg) | [email protected] |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.6175 | $ 0.6175 |
| 10+ | $0.5505 | $ 5.5050 |
| 30+ | $0.5170 | $ 15.5100 |
| 100+ | $0.4851 | $ 48.5100 |
| 500+ | $0.4643 | $ 232.1500 |
| 1000+ | $0.4547 | $ 454.7000 |
