| Fabricant | |
| Référence Fabricant | CSD17311Q5 |
| Référence EBEE | E8139640 |
| Boîtier | VSON-8-EP(5x6) |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 30V 32A 3.2W 2mΩ@8V,30A 1.6V@250uA 1 N-channel VSON-8-EP(5x6) MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.8164 | $ 1.8164 |
| 10+ | $1.5576 | $ 15.5760 |
| 30+ | $1.3956 | $ 41.8680 |
| 100+ | $1.2305 | $ 123.0500 |
| 500+ | $1.1559 | $ 577.9500 |
| 1000+ | $1.1225 | $ 1122.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Texas Instruments CSD17311Q5 | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 3.1mΩ@3V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 110pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 3.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.6V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 4.28nF | |
| Output Capacitance(Coss) | 2.26nF | |
| Gate Charge(Qg) | [email protected] |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.8164 | $ 1.8164 |
| 10+ | $1.5576 | $ 15.5760 |
| 30+ | $1.3956 | $ 41.8680 |
| 100+ | $1.2305 | $ 123.0500 |
| 500+ | $1.1559 | $ 577.9500 |
| 1000+ | $1.1225 | $ 1122.5000 |
