37% off
| Fabricant | |
| Référence Fabricant | STW33N60M2 |
| Référence EBEE | E8146206 |
| Boîtier | TO-247 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 600V 26A 35W 0.108Ω@10V,13A 2V@250uA 1 N-Channel TO-247-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.2467 | $ 1.2467 |
| 10+ | $1.0652 | $ 10.6520 |
| 30+ | $0.9525 | $ 28.5750 |
| 100+ | $0.8358 | $ 83.5800 |
| 500+ | $0.7840 | $ 392.0000 |
| 1000+ | $0.7610 | $ 761.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | STMicroelectronics STW33N60M2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 125mΩ@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 190W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 1.781nF | |
| Output Capacitance(Coss) | 85pF | |
| Gate Charge(Qg) | 45.5nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.2467 | $ 1.2467 |
| 10+ | $1.0652 | $ 10.6520 |
| 30+ | $0.9525 | $ 28.5750 |
| 100+ | $0.8358 | $ 83.5800 |
| 500+ | $0.7840 | $ 392.0000 |
| 1000+ | $0.7610 | $ 761.0000 |
