| Fabricant | |
| Référence Fabricant | STF33N60M2 |
| Référence EBEE | E82836687 |
| Boîtier | TO-220FP |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 600V 26A 190W 0.108Ω@10V,13A 4V@250uA 1 N-Channel TO-220FP-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.4913 | $ 1.4913 |
| 10+ | $1.2467 | $ 12.4670 |
| 50+ | $1.1126 | $ 55.6300 |
| 100+ | $0.9611 | $ 96.1100 |
| 500+ | $0.8932 | $ 446.6000 |
| 1000+ | $0.8633 | $ 863.3000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | STMicroelectronics STF33N60M2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 125mΩ@10V | |
| Température de fonctionnement | -50℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 2.5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 35W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 26A | |
| Ciss-Input Capacitance | 1.781nF | |
| Output Capacitance(Coss) | 85pF | |
| Gate Charge(Qg) | 45.5nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.4913 | $ 1.4913 |
| 10+ | $1.2467 | $ 12.4670 |
| 50+ | $1.1126 | $ 55.6300 |
| 100+ | $0.9611 | $ 96.1100 |
| 500+ | $0.8932 | $ 446.6000 |
| 1000+ | $0.8633 | $ 863.3000 |
