19% off
| Fabricant | |
| Référence Fabricant | STF21N65M5 |
| Référence EBEE | E8500978 |
| Boîtier | TO-220FP |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 650V 17A 190mΩ@10V,8.5A 30W 5V@250uA 1 N-channel TO-220FP MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.6442 | $ 2.6442 |
| 10+ | $2.2608 | $ 22.6080 |
| 30+ | $2.0197 | $ 60.5910 |
| 100+ | $1.7735 | $ 177.3500 |
| 500+ | $1.6619 | $ 830.9500 |
| 1000+ | $1.6132 | $ 1613.2000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Fiche Technique | ST STF21N65M5 | |
| RoHS | ||
| RDS (on) | 190mΩ@10V | |
| Capacité de transfert inversé (Crss-Vds) | - | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 30W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 5V | |
| Current - Continuous Drain(Id) | 17A | |
| Ciss-Input Capacitance | 1.95nF | |
| Gate Charge(Qg) | 50nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.6442 | $ 2.6442 |
| 10+ | $2.2608 | $ 22.6080 |
| 30+ | $2.0197 | $ 60.5910 |
| 100+ | $1.7735 | $ 177.3500 |
| 500+ | $1.6619 | $ 830.9500 |
| 1000+ | $1.6132 | $ 1613.2000 |
