18% off
| Fabricant | |
| Référence Fabricant | STP80NF06 |
| Référence EBEE | E8283533 |
| Boîtier | TO-220 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 60V 80A 300W 8mΩ@10V,40A 4V@250uA 1 N-channel TO-220AB-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $3.1519 | $ 3.1519 |
| 10+ | $2.7184 | $ 27.1840 |
| 50+ | $2.4613 | $ 123.0650 |
| 100+ | $2.2004 | $ 220.0400 |
| 500+ | $2.0810 | $ 1040.5000 |
| 1000+ | $2.0265 | $ 2026.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Fiche Technique | ST STP80NF06 | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 8mΩ@10V | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 300W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.85nF | |
| Gate Charge(Qg) | 150nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $3.1519 | $ 3.1519 |
| 10+ | $2.7184 | $ 27.1840 |
| 50+ | $2.4613 | $ 123.0650 |
| 100+ | $2.2004 | $ 220.0400 |
| 500+ | $2.0810 | $ 1040.5000 |
| 1000+ | $2.0265 | $ 2026.5000 |
