22% off
| Fabricant | |
| Référence Fabricant | STP140N6F7 |
| Référence EBEE | E8155616 |
| Boîtier | TO-220 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 60V 80A 158W 3.5mΩ@10V,40A 4V@250uA 1 N-channel TO-220 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.2917 | $ 1.2917 |
| 10+ | $1.2633 | $ 12.6330 |
| 50+ | $1.2447 | $ 62.2350 |
| 100+ | $1.2262 | $ 122.6200 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Fiche Technique | ST STP140N6F7 | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 3.5mΩ@10V | |
| Capacité de transfert inversé (Crss-Vds) | 193pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 158W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 80A | |
| Ciss-Input Capacitance | 3.1nF | |
| Output Capacitance(Coss) | 1.52nF | |
| Gate Charge(Qg) | 55nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.2917 | $ 1.2917 |
| 10+ | $1.2633 | $ 12.6330 |
| 50+ | $1.2447 | $ 62.2350 |
| 100+ | $1.2262 | $ 122.6200 |
