41% off
| Fabricant | |
| Référence Fabricant | TK11A65W,S5X(M |
| Référence EBEE | E8396036 |
| Boîtier | TO-220 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 650V 11.1A 35W 390mΩ@10V,5.5A 3.5V@450uA 1 N-channel TO-220 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.8118 | $ 0.8118 |
| 10+ | $0.7378 | $ 7.3780 |
| 50+ | $0.6983 | $ 34.9150 |
| 100+ | $0.6526 | $ 65.2600 |
| 500+ | $0.6321 | $ 316.0500 |
| 1000+ | $0.6227 | $ 622.7000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Fiche Technique | TOSHIBA TK11A65W,S5X(M | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 390mΩ@10V | |
| Capacité de transfert inversé (Crss-Vds) | 2.8pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | - | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 3.5V | |
| Current - Continuous Drain(Id) | 11.1A | |
| Ciss-Input Capacitance | 890pF | |
| Output Capacitance(Coss) | 23pF | |
| Gate Charge(Qg) | 25nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.8118 | $ 0.8118 |
| 10+ | $0.7378 | $ 7.3780 |
| 50+ | $0.6983 | $ 34.9150 |
| 100+ | $0.6526 | $ 65.2600 |
| 500+ | $0.6321 | $ 316.0500 |
| 1000+ | $0.6227 | $ 622.7000 |
