| Fabricant | |
| Référence Fabricant | STF13N60M2 |
| Référence EBEE | E8146208 |
| Boîtier | TO-220FPAB-3 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 600V 11A 380mΩ@10V,5.5A 25W 4V@250uA 1 N-Channel TO-220FPAB-3 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.6653 | $ 0.6653 |
| 10+ | $0.5367 | $ 5.3670 |
| 50+ | $0.4716 | $ 23.5800 |
| 100+ | $0.4065 | $ 40.6500 |
| 500+ | $0.3684 | $ 184.2000 |
| 1200+ | $0.3478 | $ 417.3600 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | STMicroelectronics STF13N60M2 | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 380mΩ@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 1.1pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 25W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 580pF | |
| Output Capacitance(Coss) | 32pF | |
| Gate Charge(Qg) | 17nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.6653 | $ 0.6653 |
| 10+ | $0.5367 | $ 5.3670 |
| 50+ | $0.4716 | $ 23.5800 |
| 100+ | $0.4065 | $ 40.6500 |
| 500+ | $0.3684 | $ 184.2000 |
| 1200+ | $0.3478 | $ 417.3600 |
