| Fabricant | |
| Référence Fabricant | STD13NM60N |
| Référence EBEE | E8183190 |
| Boîtier | TO-252(DPAK) |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 600V 11A 0.36Ω@10V,5.5A 90W 3V@250uA 1 N-channel TO-252-2(DPAK) MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.0705 | $ 2.0705 |
| 10+ | $1.7975 | $ 17.9750 |
| 30+ | $1.6465 | $ 49.3950 |
| 100+ | $1.4778 | $ 147.7800 |
| 500+ | $1.4023 | $ 701.1500 |
| 1000+ | $1.3686 | $ 1368.6000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Discrete Semiconductors ,FETs, MOSFETs ,Single FETs, MOSFETs | |
| Fiche Technique | ST STD13NM60N | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 360mΩ@10V | |
| Température de fonctionnement | - | |
| Capacité de transfert inversé (Crss-Vds) | 3.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 6W | |
| Drain to Source Voltage | 600V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 11A | |
| Ciss-Input Capacitance | 790pF | |
| Output Capacitance(Coss) | 60pF | |
| Gate Charge(Qg) | 27nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $2.0705 | $ 2.0705 |
| 10+ | $1.7975 | $ 17.9750 |
| 30+ | $1.6465 | $ 49.3950 |
| 100+ | $1.4778 | $ 147.7800 |
| 500+ | $1.4023 | $ 701.1500 |
| 1000+ | $1.3686 | $ 1368.6000 |
