| Fabricant | |
| Référence Fabricant | 30H10K |
| Référence EBEE | E82932013 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 30V 100A 88W 7mΩ@5V,15A 1.5V@250uA 1 N-channel TO-252-2 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1211 | $ 0.6055 |
| 50+ | $0.0953 | $ 4.7650 |
| 150+ | $0.0824 | $ 12.3600 |
| 500+ | $0.0695 | $ 34.7500 |
| 2500+ | $0.0617 | $ 154.2500 |
| 5000+ | $0.0578 | $ 289.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Shenzhen Fuman Elec 30H10K | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 7mΩ@5V | |
| Température de fonctionnement | -55℃~+175℃ | |
| Capacité de transfert inversé (Crss-Vds) | 300pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 88W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 100A | |
| Ciss-Input Capacitance | 2.6nF | |
| Gate Charge(Qg) | 58nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1211 | $ 0.6055 |
| 50+ | $0.0953 | $ 4.7650 |
| 150+ | $0.0824 | $ 12.3600 |
| 500+ | $0.0695 | $ 34.7500 |
| 2500+ | $0.0617 | $ 154.2500 |
| 5000+ | $0.0578 | $ 289.0000 |
