| Fabricant | |
| Référence Fabricant | 2060K. |
| Référence EBEE | E8841300 |
| Boîtier | TO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | TO-252-2 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.1727 | $ 0.1727 |
| 10+ | $0.1368 | $ 1.3680 |
| 30+ | $0.1214 | $ 3.6420 |
| 100+ | $0.1022 | $ 10.2200 |
| 500+ | $0.0937 | $ 46.8500 |
| 1000+ | $0.0886 | $ 88.6000 |
| 2500+ | $0.0875 | $ 218.7500 |
| 5000+ | $0.0868 | $ 434.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Shenzhen Fuman Elec 2060K. | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 4.2mΩ@4.5V | |
| Température de fonctionnement | -55℃~+155℃ | |
| Capacité de transfert inversé (Crss-Vds) | 285pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 64W | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 700mV | |
| Current - Continuous Drain(Id) | 60A | |
| Ciss-Input Capacitance | 2.85nF | |
| Output Capacitance(Coss) | 365pF | |
| Gate Charge(Qg) | [email protected] |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.1727 | $ 0.1727 |
| 10+ | $0.1368 | $ 1.3680 |
| 30+ | $0.1214 | $ 3.6420 |
| 100+ | $0.1022 | $ 10.2200 |
| 500+ | $0.0937 | $ 46.8500 |
| 1000+ | $0.0886 | $ 88.6000 |
| 2500+ | $0.0875 | $ 218.7500 |
| 5000+ | $0.0868 | $ 434.0000 |
