| Fabricant | |
| Référence Fabricant | D2N50 |
| Référence EBEE | E85155253 |
| Boîtier | TO-252W |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 500V 2A 54W 7mΩ@10V,2A 4V@250uA TO-252W MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1451 | $ 0.7255 |
| 50+ | $0.1132 | $ 5.6600 |
| 150+ | $0.0995 | $ 14.9250 |
| 500+ | $0.0825 | $ 41.2500 |
| 2500+ | $0.0749 | $ 187.2500 |
| 5000+ | $0.0703 | $ 351.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | Shandong Jingdao Microelectronics D2N50 | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS (on) | 7Ω@10V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 2.2pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 54W | |
| Drain to Source Voltage | 500V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 2A | |
| Ciss-Input Capacitance | 156pF | |
| Output Capacitance(Coss) | 24pF | |
| Gate Charge(Qg) | 7.9nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1451 | $ 0.7255 |
| 50+ | $0.1132 | $ 5.6600 |
| 150+ | $0.0995 | $ 14.9250 |
| 500+ | $0.0825 | $ 41.2500 |
| 2500+ | $0.0749 | $ 187.2500 |
| 5000+ | $0.0703 | $ 351.5000 |
