| Fabricant | |
| Référence Fabricant | RQK0204TGDQATL-H |
| Référence EBEE | E83014315 |
| Boîtier | SC-59A |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 20V 2.3A 100mΩ@4.5V,1.2A 800mW 0.4V@1mA 1 N-Channel SC-59A MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.1238 | $ 0.1238 |
| 10+ | $0.1092 | $ 1.0920 |
| 30+ | $0.1029 | $ 3.0870 |
| 100+ | $0.0951 | $ 9.5100 |
| 500+ | $0.0917 | $ 45.8500 |
| 1000+ | $0.0896 | $ 89.6000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | RENESAS RQK0204TGDQATL-H | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 130mΩ@4.5V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 14pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 800mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.4V | |
| Current - Continuous Drain(Id) | 2.3A | |
| Ciss-Input Capacitance | 127pF | |
| Output Capacitance(Coss) | 33pF | |
| Gate Charge(Qg) | 1.5nC@5V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.1238 | $ 0.1238 |
| 10+ | $0.1092 | $ 1.0920 |
| 30+ | $0.1029 | $ 3.0870 |
| 100+ | $0.0951 | $ 9.5100 |
| 500+ | $0.0917 | $ 45.8500 |
| 1000+ | $0.0896 | $ 89.6000 |
