| Fabricant | |
| Référence Fabricant | NTR4101PT1G |
| Référence EBEE | E835920 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 20V 3.2A 70mΩ@4.5V,1.6A 730mW 1.2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1033 | $ 0.5165 |
| 50+ | $0.0846 | $ 4.2300 |
| 150+ | $0.0752 | $ 11.2800 |
| 500+ | $0.0682 | $ 34.1000 |
| 3000+ | $0.0548 | $ 164.4000 |
| 6000+ | $0.0520 | $ 312.0000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,MOSFETs | |
| Fiche Technique | onsemi NTR4101PT1G | |
| RoHS | ||
| Type | P-Channel | |
| RDS(on) | 210mΩ@1.8V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 75pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 730mW | |
| Drain to Source Voltage | 20V | |
| Gate Threshold Voltage (Vgs(th)) | 1.2V | |
| Current - Continuous Drain(Id) | 3.2A | |
| Ciss-Input Capacitance | 675pF | |
| Output Capacitance(Coss) | 100pF | |
| Gate Charge(Qg) | [email protected] |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 5+ | $0.1033 | $ 0.5165 |
| 50+ | $0.0846 | $ 4.2300 |
| 150+ | $0.0752 | $ 11.2800 |
| 500+ | $0.0682 | $ 34.1000 |
| 3000+ | $0.0548 | $ 164.4000 |
| 6000+ | $0.0520 | $ 312.0000 |
