| Fabricant | |
| Référence Fabricant | FGA60N65SMD |
| Référence EBEE | E8444004 |
| Boîtier | TO-3PN |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | TO-3P-3 IGBT Transistors / Modules ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $3.4231 | $ 3.4231 |
| 10+ | $2.9881 | $ 29.8810 |
| 30+ | $2.4038 | $ 72.1140 |
| 90+ | $2.1260 | $ 191.3400 |
| 450+ | $2.0005 | $ 900.2250 |
| 900+ | $1.9450 | $ 1750.5000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,IGBT Transistors / Modules | |
| Fiche Technique | onsemi FGA60N65SMD | |
| RoHS | ||
| Collector-Emitter Breakdown Voltage (Vces) | 650V | |
| Gate-Emitter Threshold Voltage (Vge(th)@Ic) | 6V@250uA | |
| IGBT Type | FS (Field Stop) | |
| Gate Charge(Qg) | 189nC@15V | |
| Td(off) | 104ns | |
| Td(on) | 18ns | |
| Reverse Transfer Capacitance (Cres) | 85pF | |
| Reverse Recovery Time(trr) | 47ns | |
| Switching Energy(Eoff) | 450uJ | |
| Turn-On Energy (Eon) | 1.54mJ | |
| Input Capacitance(Cies) | 2.915nF | |
| Pulsed Current- Forward(Ifm) | 180A | |
| Output Capacitance(Coes) | 270pF |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $3.4231 | $ 3.4231 |
| 10+ | $2.9881 | $ 29.8810 |
| 30+ | $2.4038 | $ 72.1140 |
| 90+ | $2.1260 | $ 191.3400 |
| 450+ | $2.0005 | $ 900.2250 |
| 900+ | $1.9450 | $ 1750.5000 |
