50% off
| Fabricant | |
| Référence Fabricant | MPP10N65 |
| Référence EBEE | E817701987 |
| Boîtier | PTO-252 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 650V 10A 800mΩ 1 N-channel PTO-252 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.2241 | $ 0.2241 |
| 10+ | $0.1781 | $ 1.7810 |
| 30+ | $0.1584 | $ 4.7520 |
| 100+ | $0.1338 | $ 13.3800 |
| 500+ | $0.1227 | $ 61.3500 |
| 1000+ | $0.1156 | $ 115.6000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | miracle MPP10N65 | |
| RoHS | ||
| Type | - | |
| RDS (on) | - | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 6.6pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 100W | |
| Drain to Source Voltage | 650V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 10A | |
| Ciss-Input Capacitance | 1.595nF | |
| Output Capacitance(Coss) | 134pF | |
| Gate Charge(Qg) | 31.9nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $0.2241 | $ 0.2241 |
| 10+ | $0.1781 | $ 1.7810 |
| 30+ | $0.1584 | $ 4.7520 |
| 100+ | $0.1338 | $ 13.3800 |
| 500+ | $0.1227 | $ 61.3500 |
| 1000+ | $0.1156 | $ 115.6000 |
