| Fabricant | |
| Référence Fabricant | MS33N20HGC0 |
| Référence EBEE | E85353695 |
| Boîtier | TO-247 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 200V 33A 85mΩ@10V,16A 180W 4V@250uA 1 N-channel TO-247 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.3145 | $ 1.3145 |
| 10+ | $1.0921 | $ 10.9210 |
| 30+ | $0.9701 | $ 29.1030 |
| 90+ | $0.8310 | $ 74.7900 |
| 450+ | $0.7693 | $ 346.1850 |
| 900+ | $0.7415 | $ 667.3500 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | MASPOWER MS33N20HGC0 | |
| RoHS | ||
| Configuration | - | |
| RDS (on) | 85mΩ@10V | |
| Température de fonctionnement | -65℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 120pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 180W | |
| Drain to Source Voltage | 200V | |
| Gate Threshold Voltage (Vgs(th)) | 4V | |
| Current - Continuous Drain(Id) | 33A | |
| Ciss-Input Capacitance | 2.85nF | |
| Gate Charge(Qg) | 158nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 1+ | $1.3145 | $ 1.3145 |
| 10+ | $1.0921 | $ 10.9210 |
| 30+ | $0.9701 | $ 29.1030 |
| 90+ | $0.8310 | $ 74.7900 |
| 450+ | $0.7693 | $ 346.1850 |
| 900+ | $0.7415 | $ 667.3500 |
