| Fabricant | |
| Référence Fabricant | L2N7002SDW1T1G |
| Référence EBEE | E8383163 |
| Boîtier | SC-88 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | EAR99 |
| Description | 60V 380mA 300mW 2.8Ω@10V,500mA 2V@250uA 1 N-Channel SOT-363 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 20+ | $0.0364 | $ 0.7280 |
| 200+ | $0.0285 | $ 5.7000 |
| 600+ | $0.0241 | $ 14.4600 |
| 3000+ | $0.0207 | $ 62.1000 |
| 9000+ | $0.0184 | $ 165.6000 |
| 21000+ | $0.0171 | $ 359.1000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | LRC L2N7002SDW1T1G | |
| RoHS | ||
| Type | N-Channel | |
| Configuration | - | |
| RDS (on) | 3.2Ω@4.5V | |
| Température de fonctionnement | -55℃~+150℃ | |
| Capacité de transfert inversé (Crss-Vds) | 5pF | |
| Number | 2 N-Channel | |
| Pd - Power Dissipation | 300mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2V | |
| Current - Continuous Drain(Id) | 380mA | |
| Ciss-Input Capacitance | 35pF | |
| Output Capacitance(Coss) | 10pF | |
| Gate Charge(Qg) | [email protected] |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 20+ | $0.0364 | $ 0.7280 |
| 200+ | $0.0285 | $ 5.7000 |
| 600+ | $0.0241 | $ 14.4600 |
| 3000+ | $0.0207 | $ 62.1000 |
| 9000+ | $0.0184 | $ 165.6000 |
| 21000+ | $0.0171 | $ 359.1000 |
