| Fabricant | |
| Référence Fabricant | LGE03N06BF |
| Référence EBEE | E822388879 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | SOT-23 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 20+ | $0.0364 | $ 0.7280 |
| 200+ | $0.0288 | $ 5.7600 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0221 | $ 66.3000 |
| 9000+ | $0.0199 | $ 179.1000 |
| 21000+ | $0.0187 | $ 392.7000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyistors ,MOSFET | |
| Fiche Technique | LGE LGE03N06BF | |
| RoHS | ||
| Type | N-Channel | |
| RDS (on) | 100mΩ@4.5V | |
| Capacité de transfert inversé (Crss-Vds) | 17pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.3V | |
| Current - Continuous Drain(Id) | 3A | |
| Ciss-Input Capacitance | 330pF | |
| Output Capacitance(Coss) | 90pF | |
| Gate Charge(Qg) | 5.1nC@10V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 20+ | $0.0364 | $ 0.7280 |
| 200+ | $0.0288 | $ 5.7600 |
| 600+ | $0.0250 | $ 15.0000 |
| 3000+ | $0.0221 | $ 66.3000 |
| 9000+ | $0.0199 | $ 179.1000 |
| 21000+ | $0.0187 | $ 392.7000 |
