| Fabricant | |
| Référence Fabricant | 2N7002 |
| Référence EBEE | E8916396 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 60V 115mA 1.2Ω@10V,500mA 200mW 2.1V@250uA 1 N-Channel SOT-23 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0085 | $ 0.4250 |
| 500+ | $0.0065 | $ 3.2500 |
| 3000+ | $0.0053 | $ 15.9000 |
| 6000+ | $0.0048 | $ 28.8000 |
| 24000+ | $0.0042 | $ 100.8000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,MOSFETs | |
| Fiche Technique | JSMSEMI 2N7002 | |
| RoHS | ||
| RDS(on) | 1.7Ω@5V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 5pF | |
| Number | 1 N-channel | |
| Pd - Power Dissipation | 200mW | |
| Drain to Source Voltage | 60V | |
| Gate Threshold Voltage (Vgs(th)) | 2.5V | |
| Current - Continuous Drain(Id) | 115mA | |
| Ciss-Input Capacitance | 50pF | |
| Gate Charge(Qg) | - |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 50+ | $0.0085 | $ 0.4250 |
| 500+ | $0.0065 | $ 3.2500 |
| 3000+ | $0.0053 | $ 15.9000 |
| 6000+ | $0.0048 | $ 28.8000 |
| 24000+ | $0.0042 | $ 100.8000 |
