10% off
| Fabricant | |
| Référence Fabricant | DMP3099L-7-HXY |
| Référence EBEE | E86285742 |
| Boîtier | SOT-23 |
| Numéro Client | |
| Fiche Technique | |
| Modèles EDA | |
| ECCN | - |
| Description | 30V 4.2A 55mΩ@10V 1.3V 1 Piece P-Channel SOT-23 MOSFETs ROHS |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 20+ | $0.0350 | $ 0.7000 |
| 200+ | $0.0278 | $ 5.5600 |
| 600+ | $0.0238 | $ 14.2800 |
| 3000+ | $0.0207 | $ 62.1000 |
| 9000+ | $0.0186 | $ 167.4000 |
| 21000+ | $0.0176 | $ 369.6000 |
| Type | Description | Tout sélectionner |
|---|---|---|
| Catégorie | Transistors/Thyristors ,MOSFETs | |
| Fiche Technique | HXY MOSFET DMP3099L-7-HXY | |
| RoHS | ||
| RDS(on) | 55mΩ@10V | |
| Operating Temperature - | -55℃~+150℃ | |
| Reverse Transfer Capacitance (Crss@Vds) | 65pF | |
| Number | 1 P-Channel | |
| Pd - Power Dissipation | 1.2W | |
| Drain to Source Voltage | 30V | |
| Gate Threshold Voltage (Vgs(th)) | 1.3V | |
| Current - Continuous Drain(Id) | 4.2A | |
| Ciss-Input Capacitance | 880pF | |
| Gate Charge(Qg) | 8.5nC@15V |
| Qté. | Prix unitaire | Prix total |
|---|---|---|
| 20+ | $0.0350 | $ 0.7000 |
| 200+ | $0.0278 | $ 5.5600 |
| 600+ | $0.0238 | $ 14.2800 |
| 3000+ | $0.0207 | $ 62.1000 |
| 9000+ | $0.0186 | $ 167.4000 |
| 21000+ | $0.0176 | $ 369.6000 |
